Techniques for Accessing a Dynamic Random Access Memory Array

ABSTRACT

Examples are disclosed for accessing a dynamic random access memory (DRAM) array. In some examples, sub-arrays of a DRAM bank may be capable of opening multiple pages responsive to a same column address strobe. In other examples, sub-arrays of a DRAM bank may be arranged such that input/output (IO) bits may be routed in a serialized manner over an IO wire. For these other examples, the IO wire may pass through a DRAM die including the DRAM bank and/or may couple to a memory channel or bus outside of the DRAM die. Other examples are described and claimed.

TECHNICAL FIELD

Examples described herein are generally related to memory access todynamic random access memory.

BACKGROUND

As dynamic random access memory (DRAM) technologies are scaled tosmaller dimensions and used in various operating environments and formfactors relatively high levels of power usage by DRAM may requiremitigation by careful design to reduce power usage. These relativelyhigh levels become problematic in large computing systems such as datacenters were even small amounts of extra power usage quickly raise costsassociated with operating large data centers. Also, in small formfactors such as smart phones or tablets, performance advances made inlow power processors may be reduced if associated DRAM used in thesedevices fails to have similar advances in reducing power. For example,these small form factor devices may suffer from reduced performance ifDRAM capacity is reduced to compensate for excessive power usage byDRAM.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example first system.

FIG. 2 illustrates an example second system.

FIG. 3 illustrates an example third system.

FIG. 4 illustrates an example first logic flow.

FIG. 5 illustrates an example fourth system.

FIG. 6 illustrates an example timing.

FIG. 7 illustrates an example second logic flow.

FIG. 8 illustrates an example fifth system.

DETAILED DESCRIPTION

As contemplated in the present disclosure, DRAM power usage may requiremitigation by careful design. That careful design may factor in reducinglatencies associated with read or write commands to DRAM that may enablesmaller capacities of DRAM to operate more efficiently. Also, designs tomore efficiently route wires that carry input/output (IO) bits to DRAMarrays may further help to reduce DRAM power usage. For example,three-dimensional (3D) chip stacking techniques may allow for ashortening or even elimination of some wires as DRAM arrays or dies maybe stacked on other chips that may include processors dies, other DRAMdies or even other types of memory dies. It is with respect to these andother challenges that the examples described herein are needed.

In some examples, techniques for accessing a DRAM array may includereceiving, at a DRAM bank, first and second commands to access the DRAMbank. For these examples, a first page of the DRAM bank may be opened ata first group of sub-arrays responsive to the first command and a secondpage of the DRAM may be opened at a second group of sub-arraysresponsive to the second command. IO access to the first and secondopened pages may then be enabled during a same column address strobe(CAS). As described more below, enabling IO access to both the first andsecond opened pages during the same CAS may reduce read/write commandsincluded in queues and this may increase system performance.

According to some examples, techniques for accessing a DRAM array mayalso include receiving, at DRAM bank, a column address to fetch data foran activated page through a given column select line (COLSL) that causesIO bits to be routed via respective master data lines (MDQs) from two ormore sub-arrays for the DRAM bank. For these examples, a first IO bitfor the given COLSL from a first sub-array of the two or more sub-arraysmay be delayed for at least one column address strobe following receiptof the given column address. Also for these examples, the first IO bitrouted via a first MDQ for the first sub-array may be multiplexed with asecond IO bit routed via a second MDQ for a second sub-array of the twoor more sub-arrays such that the first and second IO bits are routedover a first IO wire in consecutive column address strobes in aserialized manner. As described more below, multiplexing the two IO bitsmay possibly reduce a number of IO wires routed from the DRAM bank. Thismay be particularly useful in 3D chip stacking scenarios as reduced IOwires may correspondingly reduce a number of through silicon vias (TSVs)passing through a DRAM die that may include the DRAM bank.

FIG. 1 illustrates an example first system. As shown in FIG. 1, thefirst system includes system 100. In some examples, system 100 mayinclude a DRAM die 105 having banks 110, 120, 130, 140 and an IO 150. Asshown in FIG. 1, in some examples, IO 150 may route IO information ordata to or from banks 110 to 140 and outside of DRAM die 105 to a bus ormemory channel 160. Although not shown in FIG. 1, memory channel 160 maycouple to a memory controller for a computing system arranged to couplewith DRAM die 105.

According to some examples, as shown in FIG. 1, banks 110 to 140 eachinclude sub-arrays that share peripheral circuitry such as row andcolumn decoders. For example, bank 110 includes sub-arrays 116-1 to116-n, where “n” is any positive whole integer greater than 3. In someexamples, sub-arrays 116-1 to 116-n may be arranged to share row decoder114 and column decoder(s) 112. Row decoder 114 or column decoder(s) 112may include logic that may activate rows and/or columns of sub-arrays116-1 to 116-n to read or write data to these sub-arrays, e.g.,responsive to row or column address strobes and receipt of read/writecommands.

In some examples, IO 150 may include circuitry to gather bits to be readfrom or written to sub-arrays 116-1 to 116-n and then route those bitsto/from one or more processors (not shown) via memory channel 160. Forthese examples, memory channel 160 may be controlled by a memorycontroller (not shown) for the one or more processors. The one or moreprocessors, for example, may be included in a computing platform, deviceor system that may include, but is not limited to, a computer, apersonal computer (PC), a desktop computer, a laptop computer, anotebook computer, a netbook computer, an Ultrabook™ computer, a tabletcomputer, a tablet, a portable gaming console, a portable media player,a wearable computer, a smart phone, a server, a server array or serverfarm, a web server, a network server, an Internet server, a workstation, a mini-computer, a main frame computer, a supercomputer, anetwork appliance, a web appliance, a distributed computing system,multiprocessor systems, processor-based systems, or combination thereof.

FIG. 2 illustrates an example second system. As shown in FIG. 2, thesecond system includes system 200. In some examples, system 200 maydepict a more detailed view of circuitry included in sub-arrays 116-1 to116-n of bank 110 of system 100 shown in FIG. 1. For these examples,sub-arrays 116-1 to 166-n may be included in a segment strip that may beactivated via various column select lines (COLSLs). These various COLSLsare shown in FIG. 2 as COLSL0 to COLSL2.

According to some examples, as shown in FIG. 2, sub-arrays 116-1 to116-n each include a plurality of bit lines coupled to sense amplifiers(Amps). For these examples, responsive to a global word line (GWL) 252driven by GWL driver 250 and also responsive to a given COLSL,input/output (IO) to the bits lines stored in sense amps 214, 222, 232or 242 thru prior page activation may be connected through respectiveCOLSL with respective local data lines (LDQs) connected to respectivemaster data lines (MDQs). For example, sub-array 116-1 having bit lines212 coupled to sense amps 214 may be enabled for IO via LDQ 216 coupledto MDQ0 to read or write a bit to a selected memory cell of bit lines212 responsive to the given COLSL and GWL 252. In some examples, asub-array may use segment word lines and its drivers as driver hierarchybelow GWL 252 to select the bits along a given bit line (not shown inFIG. 2).

In some examples, as described in more detail below, an address spacefor a given COLSL may be split into at least two groups of sub-arrays.For example, as shown in FIG. 2, each of COLSL0 to COLSL2 are split intogroup A for sub-arrays 116-1 and 116-2 and group B for sub-arrays 116-2and 116-n. A DRAM bank may include logic in a column decoder torecognize which group of sub-arrays is to open a page (e.g., activate arow) responsive to received read/write commands based on separate columnaddresses indicated in these commands. As a result of splitting a singleCOLSL between groups A and B, IO access to separate open pages in a sameDRAM bank may be possible responsive to a same column address strobe(CAS). In some examples, this may allow for the DRAM bank to have anability to nearly simultaneously service read and write commands to thetwo open pages.

Examples are not limited to the number of COLSLs shown in FIG. 2 ordescribed above for system 200. Any number of COLSLs is contemplated.Also, more groups of sub-arrays to further split address spaces forCOLSLs is contemplated. Examples, in the above context are therefore notlimited to three COLSLs and/or two groups.

FIG. 3 illustrates an example third system. As shown in FIG. 3, thethird system includes system 300. In some examples, system 300 shows howcolumn decoder(s) 112 of DRAM bank 110 may include logic to selectgroups of sub-arrays based on column addresses indicated in receivedcommands. For example, column decoder(s) 112 is shown in FIG. 3 asincluding a group decoder 312 coupled to a column decoder 316 and acolumn decoder 318. Also, as shown in FIG. 3, a command controller 314may couple to column decoder 316 and column decoder 318.

According to some examples, group decoder 312 may be capable ofreceiving one or more column addresses associated with one or morecommands (e.g., from a memory controller) received by command controller314. The one or more commands may be to access sub-arrays of DRAM bank110 that may have been grouped into group A and group B as shown in FIG.2. For these examples, group decoder 312 may determine which group ofsub-arrays may be accessed (read from or write to) based on the one ormore column addresses associated with the one or more commands. A firstset of column addresses, for example, may be assigned to sub-arrays116-1 and 116-2 included in group A and a second set of column addressmay be assigned to sub-arrays 116-3 and 116-n included in group B.

In some examples, a first command (e.g., a read command) having a firstcolumn address that falls within the first set of column addresses maybe received by command controller 314. Group decoder 312 may identifythat the first column address is part of the first set assigned to groupA and may forward the first column address to column decoder 316 forgroup A. Also a second command may also be received substantiallyconcurrent with the first command (e.g., a write command) having asecond column address that falls within the second set of columnaddresses. Group decoder 312 may identify that the second column addressis part of the second set assigned to group B and may forward the firstaddress to column decoder 318 for group B.

According to some examples, command control 314 may be capable offorwarding information associated with the received first and secondcommands. For example, the first command may be a read command andcommand control 314 may forward read control signals to column decoder316 or column decoder 318. Since column decoder 316 is handling thefirst column address associated with the first command, column decoder316 will send the read control signals to the group A sub-arrays.Meanwhile column decoder 318 may ignore these forwarded read controlsignals. In some examples, the second command may be a write command andcommand control 314 may forward write control signal to column decoder316 or column decoder 318. Since column decoder 318 is handling thesecond column address associated with the second command, column decoder318 will send the write control signals to the group B sub-arrays.Meanwhile column decoder 316 may ignore these forwarded write controlsignals.

In some examples, given COLSLs at each of group A and group B may beasserted or activated by column decoder 316 and 318, respectively basedon the received first and second column addresses. An asserted givenCOLSL to group A sub-arrays may cause a first page of DRAM bank 110 tobe opened. Also, an asserted given COLSL to group B sub-arrays may causea second page of DRAM bank 110 to be opened. For these examples, bothfirst and second pages may be opened during the same CAS. Opening thefirst and second pages may then enable MDQs assigned to group A and Bsub-arrays to allow or facilitate IO access during the same CAS. Hence,IO access associated with multiple commands may be possible at a sameDRAM bank during the same CAS.

FIG. 4 illustrates an example first logic flow 400. In some examples,logic flow 400 may be implemented by elements of systems 100, 200 or 300as described above for FIGS. 1-3. However, the example processes oroperations are not limited to implementation using elements of systems100, 200 or 300.

Moving from Start to block 410, logic flow 400 may receive first andsecond commands. In some examples, read/write control information forthe first and second commands may be received by command controller 314and group decoder 312 may receive the column addresses associated withthe first and second commands.

Proceeding from block 410 to block 420, logic flow 400 may identifygroups based on column address. According to some examples, groupdecoder 312 may identify which groups the first and second commands areassigned based on column address.

Proceeding from block 420 to decision block 430, logic flow 400 maydetermine whether the same group is indicated by column addressesassociated with the first and second commands. If the column addressesare associated with the same group, the process moves to block 440.Otherwise, if column addresses are assigned to group A, the processmoves to block 450. If column addresses are assigned to group B, theprocess moves to block 460.

Moving from decision block 430 to block 440, logic flow 400 may thenopen a single page of the same group assigned to the same columnaddresses for the first command and enable IO access to the singleopened page during a first CAS. For these examples, IO access may alsoinclude enabling IO access via MDQs assigned to the same group. The IOaccess via these MDQs may be based on read or write control signalsassociated with the first command.

Proceeding from block 440 to block 450, logic flow 400 may then openanother single page of the same group assigned to the same columnaddress for the second command and enable IO access to the other openedpage during a second CAS. Opening the other single page may also resultin the closing of the page opened responsive to the first command. Forthese examples, IO access may also include enabling IO access via MDQsassigned to the same group. The IO access via these MDQs may be based onread or write control signals associated with the second command. Theprocess may then come to an end for first and second commands receivedthat have column addresses that are assigned to the same group ofsub-arrays.

Moving from decision block 430 to block 460, logic flow 400 may open apage of group A.

Moving from decision block 430 to block 470, logic flow 400 may alsoopen a page of group B. In some examples, opening separate pages ofgroups A and B may result in separate pages of a DRAM bank being openedconcurrently.

Moving from blocks 460 or 470 to block 480, logic flow 400 may enable IOaccess to the opened pages during a same CAS. In some examples, IOaccess may include enabling separate IO access to MDQs separatelyassigned to either group A or group B. For these examples, read or writecontrol signals associated with the first or second commands may enablethe IO access to the MDQs. The process then comes to an end.

FIG. 5 illustrates an example fourth system. As shown in FIG. 5, thefourth system includes system 500. In some examples, system 500 may havea similar layout as system 200 shown in FIG. 2. As shown in FIG. 5,system 500 includes a DRAM die 505. According to some examples, DRAM die505 may include sub-arrays 510, 520, 530 and 540. Different from thelayout of system 200 shown in FIG. 2, the layout for DRAM die 505 inFIG. 5 depicts latches, multiplexers (MUXs) and through silicon vias(TSVs) to route IO wires.

According to some examples, as shown in FIG. 5, a block for latching andretiming may be coupled to COLSLs for one sub-array of pairs ofsub-arrays and a multiplexer (MUX) may be coupled to MDQs for eachsub-array of a given pair. For example, latch 518 may couple to COLSLsfor sub-array 510 and MUX 550 may couple to MDQ0 for sub-array 510 andMDQ1 for sub-array 520. Also, latch 538 may couple to COLSLs forsub-array 530 and MUX 560 may couple to MDQ2 for sub-array 530 and MDQ3for sub-array 540.

In some examples, column decoder(s) 570 may include a commandcontroller, a group decoder and possibly two or more group columndecoders (e.g., such as column decoder 316 or 318). Also, as shown inFIG. 5, column decoder(s) 570, latches 518, 538 or MUXs 550, 560 may beresponsive to or controlled by column address strobes (CASs).

According to some examples, latch 518 may be a first latch of the foursub-array layout shown in FIG. 5 that may be capable of delaying a firstIO bit for a given COLSL asserted responsive to receiving a command thatcauses column decoder(s) 570 to assert the given COLSL based on a columnaddress and may also cause GWL drive 550 to assert GWL 552. For theseexamples, the first IO bit may be delayed for at least one CAS. As aresult, IO access via MDQ0 may be shifted by a time period equivalent toat least one CAS. MUX 550 coupled to MDQ1 of sub-array 520 may becapable of delaying a second bit for the given COLSL for at least twoCASs after receipt of the column address. MUX 550 may then be controlledby each CAS such that the first IO bit routed via MDQ0 passes throughMUX 550 responsive to a first CAS and the second IO bit routed via MDQ1passes through MUX 550 responsive to a second CAS.

In some examples, latch 538 may be a second latch of the four sub-arraylayout shown in FIG. 5 that may be capable of delaying a third IO bitfor the given COLSL asserted responsive to receiving the command thatcauses column decoder(s) 570 to assert the given COLSL based on thecolumn address as mentioned above. For these examples, the third IO bitmay also be delayed for at least one CAS. As a result, IO access viaMDQ2 may also be shifted by a time period equivalent to at least oneCAS. MUX 560 coupled to MDQ2 of sub-array 530 may be capable of delayinga fourth IO bit for the given COLSL for at least two CASs after receiptof the column address. MUX 560 may also be controlled by each CAS suchthat the third IO bit routed via MDQ2 passes through MUX 560 responsiveto the first CAS and the fourth IO bit routed via MDQ2 passes throughMUX 560 responsive to a second CAS.

According to some examples, IO wire 580-1 coupled to an output for MUX550 may route the first and second IO bits outside of DRAM die 505 inthe first and second CASs in a serialized manner. Also, IO wire 580-2coupled to an output for MUX 560 may route the third and fourth IO bitsoutside of DRAM die 505 in the first and second CASs in the serializedmanner. For these examples, as shown in FIG. 5, IO wire 580-1 may berouted through TSV 590-1 and IO wire 580-2 may be routed through TSV590-2.

In some examples, DRAM die 505 may be included in a 3D chip stack. Forthese examples, TSVs 590-1 and 590-2 may couple to another chip. Thatcoupling may be include IO wires 580-1 or 580-2 through respective TSVs590-1 and 590-2 being capable of routing IO bits to the other chip.

Examples are not limited to the number of paired sub-arrays shown inFIG. 5, any number of pairs of sub-arrays is contemplated. Also, largerMUXs that may multiplex at a higher ratio than 2:1 may be used to allowfor serialization of more than 2 bits. For example, a MUX capable of 4:1multiplexing is contemplated.

According to some examples, although not shown in FIG. 5, sub-arrays510, 520, 530 and 540 may be grouped in a similar manner as mentionedabove for FIG. 2. Logic included in column decoder(s) 570 may then becapable of opening separate pages in the grouped sub-arrays as mentionedabove for FIG. 2 or FIG. 3. The separately opened pages may then haveserialized IO bits outputted from applicable MDQs as mentioned above forFIG. 5.

FIG. 6 illustrates an example timing 600. In some examples, timing 600shows how an example timing of when IO bits may be routed from MDQ0 toMDQ3 for COLSL0 of a DRAM array such as arrays 510 to 540 described forFIG. 5. Also additional bits routed from MDQs 4 and 5 are shown in FIG.6. As shown in FIG. 6, responsive to the first CAS, IO bits for MDQ 0(1st IO bit), MDQ2 (3rd IO bit) and MDQ 4 (5th IO bit) may be routedover respective IO wires 180-1, 180-2 and IO wire 180-m, where “m”equates to any positive integer greater than 2. Also, as shown in FIG.6, responsive to a second CAS, IO bits for MDQ1 (2nd IO bit), MDQ3 (4thIO bit) and MDQ6 (6th IO bit) may be routed over respective IO wires180-1, 180-2 and 180-m. As a result multiple IO bits may be outputted toIO wires in a serialized manner.

In some other examples, delays between serialized IO bits may be longerthan single CASs. Therefore examples are not limited to delays of asingle CAS for serialization of IO bits.

FIG. 7 illustrates an example second logic flow 700. In some examples,logic flow 700 may be implemented by elements of systems 100, 200, 300or 500 as described above for FIGS. 1-3 and 5. However, the exampleprocesses or operations are not limited to implementation using elementsof systems 100, 200, 300 or 500.

Moving from Start to block 410, logic flow 400 may receive a columnaddress to activate a page through a given COLSL that causes IO bits tobe routed via respective MDQs from two or more sub-arrays. In someexamples, the column address may be associated with a command receivedat a column decoder (e.g. column decoder(s) 570) that may then cause thegiven COLSL to be asserted to activate the page.

Proceeding from block 410 to block 420, logic flow 400 may delay a firstIO bit for the given COLSL from a first sub-array of the two or moresub-arrays for at least one CAS following receipt of the column address.According to some examples, the first IO bit may be delayed via use of alatch (e.g., latch 518).

Proceeding from block 420 to block 430, logic flow 400 may multiplex thefirst IO bit routed via a first MDQ for the first sub-array with asecond IO bit routed via a second MDQ for a second sub-array of the twoor more sub-arrays such that the first and second IO bits are routedover a first IO wire in consecutive CASs in a serialized manner. In someexamples, a MUX (e.g., MUX 550) coupled to the first and second MDQs maybe utilized to delay the second IO bit so that the first IO bit isoutputted from the MUX with a first CAS and the second IO bit isoutputted with a second, consecutive CAS. The process then comes to anend.

FIG. 8 illustrates an example fourth system. As shown in FIG. 8, thefourth system includes system 800. In some examples, system 800 mayinclude a processor 810, a platform controller hub 830, a system flash840 or DRAMs 820-1 to 820-n, where “n” is any positive whole integergreater than 2. Also, as shown in FIG. 8, DRAMs 820-1 to 820-n maycouple to processor 810 via respective channels 825-1 to 825-n.

According to some examples, as shown in FIG. 8, processor 810 mayinclude core(s) 812 and a memory controller 814. For these examples,memory controller 814 may include logic and/or features to serve as anintegrated memory controller for processor 810. As the integrated memorycontroller for processor 810, memory controller 814 may facilitate reador write access to DRAMs 820-1 to 820-n for elements of processor 810such as core(s) 812.

In some examples, system flash 840 may be capable of storing a basicinput output system (BIOS). For these examples, during system boot ofsystem 800, the BIOS may be forwarded via communication link 845 toplatform controller hub 830 and then to core(s) 812 via link 835. TheBIOS may include software instructions to be executed by core(s) 812 asat least a part of the system boot.

According to some examples, DRAMs 820-1 to 820-n may or may not be onseparate dual in-line memory modules (DIMMs) each having a plurality ofDRAM chips. The DIMMs may include various types of DRAM such as doubledata rate synchronous DRAM (DDR SDRAM) as described in one or moretechnical standards or specifications to include those published by theJEDEC Solid State Technology Association (“JEDEC”) for variousgenerations of DDR such as DDR2, DDR3, DDR4 or future DDR generations.For example, JESD79-3F—“DDR3 SDRAM Standard”, published in July 2012and/or later revisions. The DIMMs may be arranged in variousconfigurations to include, but are not limited to, register DIMMs(RDIMMs), load reduced DIMMs (LRDIMMS), unregistered DIMMs (UDIMMs) orfully buffered DIMMs (FB-DIMMs). These various configurations may alsobe described in one or more technical standards published by JEDEC.

In some examples, DRAMs 820-1 to 820-n may include DRAM arrays arrangedas described above for systems 200 or 500 and shown in FIGS. 2 and 5.

In some examples, system 800 may be part of a system or device that maybe, for example, user equipment, a computer, a personal computer (PC), adesktop computer, a laptop computer, a notebook computer, a netbookcomputer, a tablet computer, a tablet, a portable gaming console, aportable media player, a smart phone, wearable computer, Ultrabookcomputer, a server, a server array or server farm, a web server, anetwork server, an Internet server, a work station, a mini-computer, amain frame computer, a supercomputer, a network appliance, a webappliance, a distributed computing system, multiprocessor systems,processor-based systems, or combination thereof. Accordingly, functionsand/or specific configurations of a device including system 800described herein, may be included or omitted in various examples, assuitably desired.

It should be appreciated that example system 800 shown in the blockdiagram of FIG. 8 may represent one functionally descriptive example ofmany potential implementations. Accordingly, division, omission orinclusion of block functions depicted in the accompanying figures doesnot infer that the hardware components, circuits, software and/orelements for implementing these functions would necessarily be divided,omitted, or included in other examples.

One or more aspects of at least one example may be implemented byrepresentative instructions stored on at least one machine-readablemedium which represents various logic within the processor, which whenread by a machine, computing device or system causes the machine,computing device or system to fabricate logic to perform the techniquesdescribed herein. Such representations, known as “IP cores” may bestored on a tangible, machine readable medium and supplied to variouscustomers or manufacturing facilities to load into the fabricationmachines that actually make the logic or processor.

Various examples may be implemented using hardware elements, softwareelements, or a combination of both. In some examples, hardware elementsmay include devices, components, processors, microprocessors,controllers, decoders, circuits, circuit elements (e.g., transistors,resistors, capacitors, inductors, and so forth), integrated circuits,application specific integrated circuits (ASIC), programmable logicdevices (PLD), digital signal processors (DSP), field programmable gatearray (FPGA), memory units, logic gates, registers, semiconductordevice, chips, microchips, chip sets, and so forth. In some examples,software elements may include software components, programs,applications, computer programs, application programs, system programs,machine programs, operating system software, middleware, firmware,software modules, routines, subroutines, functions, methods, procedures,software interfaces, application program interfaces (API), instructionsets, computing code, computer code, code segments, computer codesegments, words, values, symbols, or any combination thereof.Determining whether an example is implemented using hardware elementsand/or software elements may vary in accordance with any number offactors, such as desired computational rate, power levels, heattolerances, processing cycle budget, input data rates, output datarates, memory resources, data bus speeds and other design or performanceconstraints, as desired for a given implementation.

Some examples may include an article of manufacture or at least onecomputer-readable medium. A computer-readable medium may include anon-transitory storage medium to store logic. In some examples, thenon-transitory storage medium may include one or more types ofcomputer-readable storage media capable of storing electronic data,including volatile memory or non-volatile memory, removable ornon-removable memory, erasable or non-erasable memory, writeable orre-writeable memory, and so forth. In some examples, the logic mayinclude various software elements, such as software components,programs, applications, computer programs, application programs, systemprograms, machine programs, operating system software, middleware,firmware, software modules, routines, subroutines, functions, methods,procedures, software interfaces, API, instruction sets, computing code,computer code, code segments, computer code segments, words, values,symbols, or any combination thereof.

According to some examples, a computer-readable medium may include anon-transitory storage medium to store or maintain instructions thatwhen executed by a machine, computing device or system, cause themachine, computing device or system to perform methods and/or operationsin accordance with the described examples. The instructions may includeany suitable type of code, such as source code, compiled code,interpreted code, executable code, static code, dynamic code, and thelike. The instructions may be implemented according to a predefinedcomputer language, manner or syntax, for instructing a machine,computing device or system to perform a certain function. Theinstructions may be implemented using any suitable high-level,low-level, object-oriented, visual, compiled and/or interpretedprogramming language.

Some examples may be described using the expression “in one example” or“an example” along with their derivatives. These terms mean that aparticular feature, structure, or characteristic described in connectionwith the example is included in at least one example. The appearances ofthe phrase “in one example” in various places in the specification arenot necessarily all referring to the same example.

Some examples may be described using the expression “coupled” and“connected” along with their derivatives. These terms are notnecessarily intended as synonyms for each other. For example,descriptions using the terms “connected” and/or “coupled” may indicatethat two or more elements are in direct physical or electrical contactwith each other. The term “coupled,” however, may also mean that two ormore elements are not in direct contact with each other, but yet stillco-operate or interact with each other.

It is emphasized that the Abstract of the Disclosure is provided tocomply with 37 C.F.R. Section 1.72(b), requiring an abstract that willallow the reader to quickly ascertain the nature of the technicaldisclosure. It is submitted with the understanding that it will not beused to interpret or limit the scope or meaning of the claims. Inaddition, in the foregoing Detailed Description, it can be seen thatvarious features are grouped together in a single example for thepurpose of streamlining the disclosure. This method of disclosure is notto be interpreted as reflecting an intention that the claimed examplesrequire more features than are expressly recited in each claim. Rather,as the following claims reflect, inventive subject matter lies in lessthan all features of a single disclosed example. Thus the followingclaims are hereby incorporated into the Detailed Description, with eachclaim standing on its own as a separate example. In the appended claims,the terms “including” and “in which” are used as the plain-Englishequivalents of the respective terms “comprising” and “wherein,”respectively. Moreover, the terms “first,” “second,” “third,” and soforth, are used merely as labels, and are not intended to imposenumerical requirements on their objects.

In some examples, an example first apparatus may include a DRAM bankthat includes a first group of sub-arrays and a second group ofsub-arrays and a group decoder to receive column addresses associatedwith commands to access the DRAM bank and determine which group ofsub-arrays is to be accessed based on the column addresses. The firstapparatus also including a first column address decoder coupled to thefirst group of sub-arrays. The first column address decoder capable ofopening a first page of the DRAM bank responsive to a first commandreceived by the group decoder that has first column addresses assignedto the first group and responsive to a given CAS. The first apparatusalso including a second column address decoder coupled to the secondgroup of sub-arrays. The second column address decoder may be capable ofopening a second page of the DRAM bank responsive to a second commandreceived by the group decoder that has second column addresses assignedto the second group and responsive to the given CAS.

According to some examples for the first apparatus, the DRAM bank mayinclude MDQs arranged so that first and second portions of the MDQs arerespectively assigned to the first and second groups of sub-arrays. Thefirst and second portions may be capable of IO access to the first andsecond opened pages during the given CAS.

In some examples, the first apparatus may also include a commandcontroller to forward information associated with the first and secondcommands to the first and second decoders to provide read or writeaccess to the first and second opened pages during the given CAS.

According to some examples for the first apparatus, the first commandmay be a read command and the second command is a write command.

In some examples for the first apparatus, the DRAM bank may be DDR DRAMthat includes DDR3 DRAM or DDR4 DRAM.

In some examples for the first apparatus, the DRAM bank may be locatedon a DRAM die included in a 3D chip stack.

In some examples, an example first method may include receiving, at aDRAM bank, first and second commands to access the DRAM bank and openinga first page of the DRAM bank at a first group of sub-arrays responsiveto the first command. The first methods may also include opening asecond page of the DRAM bank at a second group of sub-arrays responsiveto the second command and enabling IO access to the first and secondopened pages during a same CAS.

According to some examples, the first method may also includedetermining to open the first page responsive to the first command basedon a first column address indicated in the first command that isassigned to the first group of sub-arrays. The first method may alsoinclude determining to open the second page responsive to the secondcommand based on a second column address indicated in the second commandthat is assigned to the second group of sub-arrays.

In some examples for the first method, the DRAM bank may include MDQsarranged so that first and second portions of the MDQs are respectivelyassigned to the first and second groups of sub-arrays. For theseexamples, the first and second portions may be capable of IO access tothe first and second opened pages during the given CAS.

According to some examples for the first method, the first command maybe a read command and the second command is a write command.

In some examples, an apparatus may include means for performing theabove first method.

In some examples, an example second apparatus may include a DRAM arrayhaving at least two sub-arrays, each sub-array having an MDQ capable ofIO for a given COLSL from each of the plurality of sub-arrays. Thesecond apparatus may also include a first latch coupled to the givenCOLSL for a first sub-array of the at least two sub-arrays. The firstlatch may delay a first IO bit for the given COLSL from the firstsub-array for at least one column address strobe responsive to receiptof a column address for the given COLSL. The first apparatus may alsoinclude a first MUX coupled to a first MDQ for the first sub-array and asecond MDQ for a second sub-array of the at least two sub-arrays. Thefirst MUX may be capable of delaying a second IO bit for the given COLSLfor at least two column address strobes after receipt of the columnaddress for the given COLSL. The first MUX may be controlled by eachcolumn address strobe such that the first IO bit routed via the firstMDQ passes through the first MUX responsive to a first column addressstrobe and the second IO bit routed via the second MDQ passes throughthe first MUX responsive to a second column address strobe.

According to some examples, the second apparatus may also include afirst IO wire coupled to the output of the first MUX to route the firstand second IO bits outside of a DRAM die including the DRAM array in thefirst and second column address strobes in a serialized manner.

In some examples for the second apparatus, the DRAM die may be includedin a 3D chip stack. For these examples, the first IO wire may be routedthrough a first TSV in the DRAM die to another chip in the 3D chipstack.

According to some examples for the second apparatus, the first latch maybe controlled by each column address strobe.

In some examples for the second apparatus, the DRAM array may be a DRAMbank having first and second groups of sub-arrays. For these examples,the first and second sub-arrays may be included in the first group andthird and fourth sub-arrays may be included in the second group.

According to some examples, the second apparatus may also include asecond latch coupled to the given COLSL for the third sub-array. Thesecond latch may delay a third IO bit for the given COLSL from the thirdsub-array for at least one column address strobe responsive to receiptof the column address for the given COLSL. The second apparatus may alsoinclude a second MUX coupled to a third MDQ for the third sub-array anda fourth MDQ for the fourth sub-array. The second MUX may be capable ofdelaying a fourth IO bit for the given COLSL for at least two columnaddress strobes after receipt of the column address for the given COLSL.The second MUX may be controlled by each column address strobe such thatthe third IO bit routed via the third MDQ passes through the second MUXresponsive to the first column address strobe and the fourth IO bitrouted via the fourth MDQ passes through the second MUX responsive tothe second column address strobe.

In some examples, the second apparatus may also include a first IO wirecoupled to the output of the first MUX to route the first and second IObits outside of a DRAM die including the DRAM array in the first andsecond column address strobes in a serialized manner. The secondapparatus may also include a second IO wire coupled to the output of thesecond MUX to route the third and fourth IO bits outside the DRAM dieincluding the DRAM array in the first and second column address strobesin the serialized manner.

According to some examples for the second apparatus, the DRAM die may beincluded in a 3D chip stack. For these examples, the first IO wire maybe routed through a first TSV in the DRAM die to another chip in the 3Dchip stack. The second IO wire may route the third and fourth IO bitsthrough a second TSV in the DRAM die to the other chip.

In some examples, the second apparatus may also include a group decoderto receive commands to access the DRAM bank and determine which group ofsub-arrays is to be accessed based on column addresses indicated inreceived commands. The second apparatus may also include a first columnaddress decoder coupled to the first group of sub-arrays. The firstcolumn address decoder may be capable of opening a first page of theDRAM bank responsive to a first command received by the group decoderthat has first column addresses assigned to the first group andresponsive to the given column address strobe. The second apparatus mayalso include a second column address decoder coupled to the second groupof sub-arrays. The second column address decoder may be capable ofopening a second page of the DRAM bank responsive to a second commandreceived by the group decoder that has second column addresses assignedto the second group and responsive to the given column address strobe.The second apparatus may also include a command controller that mayforward information associated with the first and second commands to thefirst and second decoders to provide read or write access to the firstand second opened pages during the given column address strobe.

In some examples, an example second method may include receiving, at aDRAM bank, a column address to activate a page through a given COLSLthat causes IO bits to be routed via respective MDQs from two or moresub-arrays for the DRAM bank. The second methods may also includedelaying a first IO bit for the given COLSL from a first sub-array ofthe two or more sub-arrays for at least one column address strobefollowing receipt of the column address. The second methods may alsoinclude multiplexing the first IO bit routed via a first MDQ for thefirst sub-array with a second IO bit routed via a second MDQ for asecond sub-array of the two or more sub-arrays such that the first andsecond IO bits are routed over a first IO wire in consecutive columnaddress strobes in a serialized manner.

According to some examples for the second method, the DRAM bank may belocated on a DRAM die. For these examples, the first IO wire may routethe first and second IO bits to a data bus coupled to the DRAM die.

In some examples for the second method, the DRAM bank may be located ona DRAM die included in a 3D chip stack. The first IO wire may route thefirst and second IO bits through a first TSV in the DRAM die to anotherchip included in the 3D chip stack.

According to some examples for the second method, the DRAM bank may havefirst and second groups of sub-arrays. For these examples, the first andsecond sub-arrays may be included in the first group and third andfourth sub-arrays included in the second group.

In some examples, the second method may also include delaying a third IObit for the given COLSL from the third sub-array for at least one columnaddress strobe following receipt of the column address. The secondmethods may also include multiplexing the third IO bit routed via athird MDQ for the third sub-array with a fourth IO bit routed via afourth MDQ for the fourth sub-array such that the third and fourth IObits are routed over a second IO wire in the consecutive column addressstrobes in the serialized manner.

According to some examples for the second method, the DRAM bank may belocated on a DRAM die included in a 3D chip stack. For these examples,the first IO wire may route the first and second IO bits through a firstTSV in the DRAM die to another chip included in the 3D chip stack. Also,the second IO wire may route the third and fourth IO bits through asecond TSV in the DRAM die to the other chip.

In some examples, an apparatus may include means for performing thesecond method as described above.

Although the subject matter has been described in language specific tostructural features and/or methodological acts, it is to be understoodthat the subject matter defined in the appended claims is notnecessarily limited to the specific features or acts described above.Rather, the specific features and acts described above are disclosed asexample forms of implementing the claims.

What is claimed is:
 1. An apparatus comprising: a dynamic random accessmemory (DRAM) bank that includes a first group of sub-arrays and asecond group of sub-arrays; a group decoder to receive column addressesassociated with commands to access the DRAM bank and determine whichgroup of sub-arrays is to be accessed based on the column addresses; afirst column address decoder coupled to the first group of sub-arrays,the first column address decoder capable of opening a first page of theDRAM bank responsive to a first command received by the group decoderthat has first column addresses assigned to the first group andresponsive to a given column address strobe (CAS); and a second columnaddress decoder coupled to the second group of sub-arrays, the secondcolumn address decoder capable of opening a second page of the DRAM bankresponsive to a second command received by the group decoder that hassecond column addresses assigned to the second group and responsive tothe given CAS.
 2. The apparatus of claim 1, comprising the DRAM bankincluding master data lines (MDQs) arranged so that first and secondportions of the MDQs are respectively assigned to the first and secondgroups of sub-arrays, the first and second portions capable ofinput/output access to the first and second opened pages during thegiven CAS.
 3. The apparatus of claim 1, comprising: a command controllerto forward information associated with the first and second commands tothe first and second decoders to provide read or write access to thefirst and second opened pages during the given CAS.
 4. The apparatus ofclaim 1, comprising the first command is a read command and the secondcommand is a write command.
 5. The apparatus of claim 1, the DRAM bankcomprising double data rate (DDR) DRAM that includes DDR3 DRAM or DDR4DRAM.
 6. The apparatus of claim 1, comprising the DRAM bank located on aDRAM die included in a three-dimensional (3D) chip stack.
 7. A methodcomprising: receiving, at a dynamic random access memory (DRAM) bank,first and second commands to access the DRAM bank; opening a first pageof the DRAM bank at a first group of sub-arrays responsive to the firstcommand; opening a second page of the DRAM bank at a second group ofsub-arrays responsive to the second command; and enabling input/outputaccess to the first and second opened pages during a same column addressstrobe (CAS).
 8. The method of claim 7, comprising: determining to openthe first page responsive to the first command based on a first columnaddress indicated in the first command that is assigned to the firstgroup of sub-arrays; and determining to open the second page responsiveto the second command based on a second column address indicated in thesecond command that is assigned to the second group of sub-arrays. 9.The method of claim 8, comprising the DRAM bank including master datalines (MDQs) arranged so that first and second portions of the MDQs arerespectively assigned to the first and second groups of sub-arrays, thefirst and second portions capable of input/output access to the firstand second opened pages during the given CAS.
 10. The method of claim 9,comprising the first command is a read command and the second command isa write command.
 11. An apparatus comprising: a dynamic random accessmemory (DRAM) array having at least two sub-arrays, each sub-arrayhaving a master data line (MDQ) capable of input/output (IO) for a givencolumn select line (COLSL) from each of the plurality of sub-arrays; afirst latch coupled to the given COLSL for a first sub-array of the atleast two sub-arrays, the first latch to delay a first IO bit for thegiven COLSL from the first sub-array for at least one column addressstrobe responsive to receipt of a column address for the given COLSL;and a first multiplexer (MUX) coupled to a first MDQ for the firstsub-array and a second MDQ for a second sub-array of the at least twosub-arrays, the first MUX capable of delaying a second IO bit for thegiven COLSL for at least two column address strobes after receipt of thecolumn address for the given COLSL, the first MUX controlled by eachcolumn address strobe such that the first IO bit routed via the firstMDQ passes through the first MUX responsive to a first column addressstrobe and the second IO bit routed via the second MDQ passes throughthe first MUX responsive to a second column address strobe.
 12. Theapparatus of claim 11, comprising; a first IO wire coupled to the outputof the first MUX to route the first and second IO bits outside of a DRAMdie including the DRAM array in the first and second column addressstrobes in a serialized manner.
 13. The apparatus of claim 12,comprising the DRAM die included in a three-dimensional (3D) chip stack,the first IO wire routed through a first through silicon via (TSV) inthe DRAM die to another chip in the 3D chip stack.
 14. The apparatus ofclaim 11, comprising the first latch to be controlled by each columnaddress strobe.
 15. The apparatus of claim 11, the DRAM array comprisinga DRAM bank having first and second groups of sub-arrays, the first andsecond sub-arrays included in the first group and third and fourthsub-arrays included in the second group.
 16. The apparatus of claim 15,comprising: a second latch coupled to the given COLSL for the thirdsub-array, the second latch to delay a third IO bit for the given COLSLfrom the third sub-array for at least one column address stroberesponsive to receipt of the column address for the given COLSL; and asecond MUX coupled to a third MDQ for the third sub-array and a fourthMDQ for the fourth sub-array, the second MUX capable of delaying afourth IO bit for the given COLSL for at least two column addressstrobes after receipt of the column address for the given COLSL, thesecond MUX controlled by each column address strobe such that the thirdIO bit routed via the third MDQ passes through the second MUX responsiveto the first column address strobe and the fourth IO bit routed via thefourth MDQ passes through the second MUX responsive to the second columnaddress strobe.
 17. The apparatus of claim 16, comprising; a first IOwire coupled to the output of the first MUX to route the first andsecond IO bits outside of a DRAM die including the DRAM array in thefirst and second column address strobes in a serialized manner; and asecond IO wire coupled to the output of the second MUX to route thethird and fourth IO bits outside the DRAM die including the DRAM arrayin the first and second column address strobes in the serialized manner.18. The apparatus of claim 17, comprising the DRAM die included in athree-dimensional (3D) chip stack, the first IO wire routed through afirst through silicon via (TSV) in the DRAM die to another chip in the3D chip stack, the second IO wire to route the third and fourth IO bitsthrough a second TSV in the DRAM die to the other chip.
 19. Theapparatus of claim 15, comprising: a group decoder to receive commandsto access the DRAM bank and determine which group of sub-arrays is to beaccessed based on column addresses indicated in received commands; afirst column address decoder coupled to the first group of sub-arrays,the first column address decoder capable of opening a first page of theDRAM bank responsive to a first command received by the group decoderthat has first column addresses assigned to the first group andresponsive to the given column address strobe; a second column addressdecoder coupled to the second group of sub-arrays, the second columnaddress decoder capable of opening a second page of the DRAM bankresponsive to a second command received by the group decoder that hassecond column addresses assigned to the second group and responsive tothe given column address strobe; and a command controller to forwardinformation associated with the first and second commands to the firstand second decoders to provide read or write access to the first andsecond opened pages during the given column address strobe.
 20. A methodcomprising: receiving, at a dynamic random access memory (DRAM) bank, acolumn address to activate a page through a given column select line(COLSL) that causes input/output (IO) bits to be routed via respectivemaster data lines (MDQs) from two or more sub-arrays for the DRAM bank;delaying a first IO bit for the given COLSL from a first sub-array ofthe two or more sub-arrays for at least one column address strobefollowing receipt of the column address; and multiplexing the first IObit routed via a first MDQ for the first sub-array with a second IO bitrouted via a second MDQ for a second sub-array of the two or moresub-arrays such that the first and second IO bits are routed over afirst IO wire in consecutive column address strobes in a serializedmanner.
 21. The method of claim 20, comprising the DRAM bank located ona DRAM die, the first IO wire to route the first and second IO bits to adata bus coupled to the DRAM die.
 22. The method of claim 20, comprisingthe DRAM bank located on a DRAM die included in a three-dimensional (3D)chip stack, the first IO wire to route the first and second IO bitsthrough a first through silicon via (TSV) in the DRAM die to anotherchip included in the 3D chip stack.
 23. The method of claim 20,comprising the DRAM bank having first and second groups of sub-arrays,the first and second sub-arrays included in the first group and thirdand fourth sub-arrays included in the second group.
 24. The method ofclaim 22, comprising: delaying a third IO bit for the given COLSL fromthe third sub-array for at least one column address strobe followingreceipt of the column address; and multiplexing the third IO bit routedvia a third MDQ for the third sub-array with a fourth IO bit routed viaa fourth MDQ for the fourth sub-array such that the third and fourth IObits are routed over a second IO wire in the consecutive column addressstrobes in the serialized manner.
 25. The method of claim 24, comprisingthe DRAM bank located on a DRAM die included in a three-dimensional (3D)chip stack, the first IO wire to route the first and second IO bitsthrough a first through silicon via (TSV) in the DRAM die to anotherchip included in the 3D chip stack, the second IO wire to route thethird and fourth IO bits through a second TSV in the DRAM die to theother chip.